- 专利标题： Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction
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申请号： US17136831申请日： 2020-12-29
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公开(公告)号： US11621348B2公开(公告)日： 2023-04-04
- 发明人: Kangguo Cheng , Chen Zhang , Xin Miao , Wenyu Xu
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Samuel Waldbaum
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/51 ; H01L29/49
摘要：
A method of forming a vertical fin field effect transistor device is provided. The method includes forming a vertical fin and fin template on a bottom source/drain layer, wherein the fin template is on the vertical fin. The method further includes forming a gate structure on the vertical fin and fin template, and forming a top spacer layer on the gate structure. The method further includes removing the fin template to form an opening in the top spacer layer, and removing a portion of a gate electrode of the gate structure to form a cavity; and removing a portion of a gate dielectric layer of the gate structure to form a groove around the vertical fin.
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