发明授权
- 专利标题： Etching method
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申请号： US17692227申请日： 2022-03-11
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公开(公告)号： US11615964B2公开(公告)日： 2023-03-28
- 发明人: Takahiro Yokoyama , Maju Tomura , Yoshihide Kihara , Ryutaro Suda , Takatoshi Orui
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： JPJP2019-203326 20191108,WOPCT/JP2020/005847 20200214,JPJP2020-152786 20200911
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/3065 ; H01L21/311
摘要：
An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.
公开/授权文献
- US20220199412A1 ETCHING METHOD 公开/授权日：2022-06-23
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