- 专利标题: Dual band frequency selective radiator array
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申请号: US16786881申请日: 2020-02-10
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公开(公告)号: US11600922B2公开(公告)日: 2023-03-07
- 发明人: Jack J. Schuss , Phillip W. Thiessen , Thomas V. Sikina
- 申请人: RAYTHEON COMPANY
- 申请人地址: US MA Waltham
- 专利权人: RAYTHEON COMPANY
- 当前专利权人: RAYTHEON COMPANY
- 当前专利权人地址: US MA Waltham
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 主分类号: H01Q5/40
- IPC分类号: H01Q5/40 ; G01S7/03 ; H01Q15/00 ; H01Q21/06
摘要:
A dual band frequency selective radiator array includes a high band radiator array disposed on a dielectric layer for transmitting and receiving high band radar signals; a low band radiator array disposed on a front side of the high band radiator array for transmitting and receiving low band radar signals; a frequency selective surface (FSS) tuned to the high band radar signals forming a surface of the low band radiator array and passes the high band radar signals to the high band radiator array; and a single aperture disposed in front of the low band radiator array, the high band radiator array and the FSS for both the low band radiator array and the high band radiator array for transmitting and receiving the radar signals.
公开/授权文献
- US20210249771A1 DUAL BAND FREQUENCY SELECTIVE RADIATOR ARRAY 公开/授权日:2021-08-12
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