Invention Grant
- Patent Title: Connecting structure and method for forming the same
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Application No.: US16990940Application Date: 2020-08-11
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Publication No.: US11587875B2Publication Date: 2023-02-21
- Inventor: U-Ting Chiu , Yu-Shih Wang , Chun-Cheng Chou , Yu-Fang Huang , Chun-Neng Lin , Ming-Hsi Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT
- Agent Anthony King
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L27/11 ; H01L23/528 ; H01L21/768 ; H01L21/3213 ; H01L21/311

Abstract:
A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.
Information query
IPC分类: