- 专利标题: Semiconductor device
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申请号: US17408572申请日: 2021-08-23
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公开(公告)号: US11575049B2公开(公告)日: 2023-02-07
- 发明人: Atsushi Umezaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2009-077955 20090327
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; G09G3/20 ; G09G3/36 ; G11C19/28 ; H01L21/477 ; H01L27/12
摘要:
One of the objects is to improve display quality by reduction in malfunctions of a circuit. In a driver circuit formed using a plurality of pulse output circuits having first to third transistors and first to fourth signal lines, a first clock signal is supplied to the first signal line; a preceding stage signal is supplied to the second signal line; a second clock signal is supplied to the third signal line; an output signal is output from the fourth signal line. Duty ratios of the first clock signal and the second clock signal are different from each other. A period during which the second clock signal is changed from an L-level signal to an H-level signal after the first clock signal is changed from an H-level signal to an L-level signal is longer than a period during which the preceding stage signal is changed from an L-level signal to an H-level signal.
公开/授权文献
- US20210384358A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-12-09
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