Invention Grant
- Patent Title: Method of thin film deposition in trenches
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Application No.: US16795232Application Date: 2020-02-19
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Publication No.: US11572619B2Publication Date: 2023-02-07
- Inventor: Jinrui Guo , Ludovic Godet , Rutger Meyer Timmerman Thijssen , Yongan Xu , Jhenghan Yang , Chien-An Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/56 ; C23C16/30

Abstract:
Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
Public/Granted literature
- US20200332414A1 MEHTOD OF THIN FILM DEPOSITION IN TRENCHES Public/Granted day:2020-10-22
Information query
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