- 专利标题: Flash memory control method of re-programming memory cells before erase operations, flash memory storage device and flash memory controller
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申请号: US17242240申请日: 2021-04-27
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公开(公告)号: US11561719B2公开(公告)日: 2023-01-24
- 发明人: Yu-Siang Yang , Wei Lin , An-Cheng Liu , Yu-Heng Liu , Chun-Hsi Lai , Ting-Chien Zhan
- 申请人: PHISON ELECTRONICS CORP.
- 申请人地址: TW Miaoli
- 专利权人: PHISON ELECTRONICS CORP.
- 当前专利权人: PHISON ELECTRONICS CORP.
- 当前专利权人地址: TW Miaoli
- 代理机构: JCIPRNET
- 优先权: TW110113805 20210416
- 主分类号: G06F3/06
- IPC分类号: G06F3/06
摘要:
A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.
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