- 专利标题: Spin element and reservoir element including high resistance layer
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申请号: US16959690申请日: 2020-01-24
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公开(公告)号: US11545618B2公开(公告)日: 2023-01-03
- 发明人: Tomoyuki Sasaki , Yohei Shiokawa
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 国际申请: PCT/JP2020/002500 WO 20200124
- 国际公布: WO2021/149241 WO 20210729
- 主分类号: H01L43/04
- IPC分类号: H01L43/04 ; H01L27/22 ; H01L43/06 ; G06N3/063
摘要:
A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.
公开/授权文献
- US20210399210A1 SPIN ELEMENT AND RESERVOIR ELEMENT 公开/授权日:2021-12-23
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