- 专利标题： Devices and methods for writing to a memory cell of a memory
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申请号： US17030536申请日： 2020-09-24
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公开(公告)号： US11545215B2公开(公告)日： 2023-01-03
- 发明人: Chung-Cheng Chou
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： G11C11/4074
- IPC分类号： G11C11/4074 ; G11C13/00
摘要：
A method for writing to a memory is disclosed. The method includes generating a write current that flows to a memory cell of the memory, generating a mirror current that mirrors the write current, and inhibiting application of a write voltage to the memory cell of the memory based on the mirror current. A device that performs the method is also disclosed. A memory that includes the device is also disclosed.
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