- 专利标题: Semiconductor integrated circuit
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申请号: US17472318申请日: 2021-09-10
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公开(公告)号: US11533051B2公开(公告)日: 2022-12-20
- 发明人: Eriko Shigesawa , Akio Ogura
- 申请人: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址: JP Tokyo; JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址: JP Tokyo; JP Tokyo
- 代理机构: Allen & Overy LLP
- 优先权: JPJP2020-194339 20201124
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
According to one embodiment, a semiconductor integrated circuit includes the following configuration. A first transistor has a source and a gate coupled to first and second voltage nodes respectively. A second transistor has a source and a gate coupled to third and second voltage nodes respectively. A third transistor is coupled between the first and second transistors. A fourth transistor has a source coupled to the first voltage node and a gate coupled to a first output node between the second and third transistors. A fifth transistor has a source coupled to the third voltage node, a gate coupled to the gate of the fourth transistor and a drain coupled to a drain of the fourth transistor. A sixth transistor has a gate supplied with a voltage output from a second output node between the fourth and fifth transistors and a source coupled to the first voltage node.
公开/授权文献
- US20220166428A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日:2022-05-26
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