- 专利标题: Substrate processing apparatus and method
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申请号: US17193545申请日: 2021-03-05
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公开(公告)号: US11532784B2公开(公告)日: 2022-12-20
- 发明人: Manabu Nakagawasai , Koji Maeda , Shinji Orimoto , Motoi Yamagata
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Fenwick & West LLP
- 优先权: JPJP2020-039064 20200306
- 主分类号: H01L43/12
- IPC分类号: H01L43/12 ; C23C14/50 ; C23C14/54
摘要:
A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.
公开/授权文献
- US20210280777A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 公开/授权日:2021-09-09
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