- 专利标题： Interconnect structure, semiconductor structure including interconnect structure and method for forming the same
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申请号： US16883929申请日： 2020-05-26
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公开(公告)号： US11532580B2公开(公告)日： 2022-12-20
- 发明人: Jung-Chou Tsai , Fong-Yuan Chang , Po-Hsiang Huang , Chin-Chou Liu , Yi-Kan Cheng
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT Law
- 代理商 Anthony King
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L23/00 ; H01L23/522 ; H01L25/065
摘要：
An interconnect structure includes a plurality of first pads, a plurality of second pads, a plurality of first conductive lines in a first layer, a plurality of second conductive lines in a second layer, and a plurality of nth conductive lines in an nth layer. The first pads and the second pads respectively are grouped into a first, a second and an nth group. Each of the first pads in first group is connected to one of the second pads in the first group by one of the first conductive lines. Each of the first pads in the second group is connected to one of the second pads in the second group by one of the second conductive lines. Each of the first pads in the nth group is connected to one of the second pads in the nth group by one of the nth conductive lines.
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