- 专利标题： System and method for optimizing a lithography exposure process
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申请号： US17407678申请日： 2021-08-20
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公开(公告)号： US11531279B2公开(公告)日： 2022-12-20
- 发明人: Elvino da Silveira , Keith F. Best , Wayne Fitzgerald , Jian Lu , Xin Song , J. Casey Donaher , Christopher J. McLaughlin
- 申请人： Onto Innovation, Inc.
- 申请人地址： US MA Wilmington
- 专利权人： Onto Innovation, Inc.
- 当前专利权人： Onto Innovation, Inc.
- 当前专利权人地址： US MA Wilmington
- 代理机构： Schwegman Lundberg & Woessner. P.A.
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F9/00
摘要：
A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.
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