- 专利标题： Semiconductor chip including penetrating electrodes, and semiconductor package including the semiconductor chip
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申请号： US17088363申请日： 2020-11-03
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公开(公告)号： US11515254B2公开(公告)日： 2022-11-29
- 发明人: Ki Bum Kim , Bok Kyu Choi
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2020-0087380 20200715
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L23/31 ; H01L25/065 ; H01L23/532
摘要：
A semiconductor chip may include: a body portion including a front surface and a back surface; penetrating electrodes penetrating the body portion; and back connection electrodes disposed over the back surface of the body portion and connected to the penetrating electrodes, wherein the penetrating electrodes include a power penetrating electrode for transmitting a power voltage and a ground penetrating electrode for transmitting a ground voltage, the back connection electrodes include a power back connection electrode connected to the power penetrating electrode and a ground back connection electrode connected to the ground penetrating electrode, and one power back connection electrode is connected with two or more power penetrating electrodes, and one ground back connection electrode is connected with two or more ground penetrating electrodes.
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