- Patent Title: Method of metal gate formation and structures formed by the same
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Application No.: US17067193Application Date: 2020-10-09
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Publication No.: US11508627B2Publication Date: 2022-11-22
- Inventor: Yi-Jing Lee , Ya-Yun Cheng , Hau-Yu Lin , I-Sheng Chen , Chia-Ming Hsu , Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/49 ; H01L21/321 ; H01L21/02 ; H01L21/28 ; H01L29/66

Abstract:
A method includes: providing a substrate; forming a first pair of source/drain regions in the substrate; disposing an interlayer dielectric layer over the substrate, the interlayer dielectric layer having a first trench between the first pair of source/drain regions; depositing a dielectric layer in the first trench; depositing a barrier layer over the dielectric layer; performing an operation on the substrate; removing the barrier layer from the first trench to expose the dielectric layer subsequent to the operation; and depositing a work function layer over the dielectric layer in the first trench.
Public/Granted literature
- US20210028069A1 METHOD OF METAL GATE FORMATION AND STRUCTURES FORMED BY THE SAME Public/Granted day:2021-01-28
Information query
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