发明授权
- 专利标题： Integrated circuits
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申请号： US16859914申请日： 2020-04-27
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公开(公告)号： US11495559B2公开(公告)日： 2022-11-08
- 发明人: Hsien-Wei Chen , Ming-Fa Chen , Sung-Feng Yeh , Ying-Ju Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： JCIPRNET
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L23/00 ; H01L23/48 ; H01L21/768
摘要：
One of integrated circuits includes a substrate, a through via, a conductive pad and at least one via. The through via is disposed in the substrate. The conductive pad is disposed over and electrically connected to the through via, and the conductive pad includes at least one dielectric pattern therein. The via is disposed between and electrically connected to the through via and the conductive pad.
公开/授权文献
- US20210335735A1 INTEGRATED CIRCUITS 公开/授权日：2021-10-28
信息查询
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