- 专利标题: Offset current sensor structure
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申请号: US16241111申请日: 2019-01-07
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公开(公告)号: US11480591B2公开(公告)日: 2022-10-25
- 发明人: Javier Bilbao De Mendizabal , Simon Houis
- 申请人: Melexis Technologies SA
- 申请人地址: CH Bevaix
- 专利权人: Melexis Technologies SA
- 当前专利权人: Melexis Technologies SA
- 当前专利权人地址: CH Bevaix
- 代理机构: Workman Nydegger
- 优先权: EP18150505 20180105
- 主分类号: G01R19/00
- IPC分类号: G01R19/00 ; G01R15/20 ; G01R33/00 ; G01R33/07 ; G01R33/09
摘要:
A current-sensor structure comprises a conductor for conducting electrical current in a current direction. The conductor has one or more conductor surfaces and an edge. At least one current sensor is disposed on, over, adjacent to or in contact with the conductor and is offset from a centre of the conductor in an offset direction orthogonal to the current direction. The current sensor is aligned with the edge of the conductor or the conductor has a width W and the current sensor is within a distance of W/2.5, W/3, W/4, W/5 or W/6 of the conductor edge. The current-sensor structure can comprise a substrate on which the conductor is disposed.
公开/授权文献
- US20190212372A1 OFFSET CURRENT SENSOR STRUCTURE 公开/授权日:2019-07-11
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