- 专利标题: Physical vapor deposition chamber with target surface morphology monitor
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申请号: US16429187申请日: 2019-06-03
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公开(公告)号: US11479849B2公开(公告)日: 2022-10-25
- 发明人: Hai-Dang Trinh , Chii-Ming Wu , Shing-Chyang Pan
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: C23C14/54
- IPC分类号: C23C14/54 ; G06N20/00 ; C23C14/35
摘要:
A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.
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