发明授权
- 专利标题： Memory device using a multilayer ferroelectric stack and method of forming the same
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申请号： US16412764申请日： 2019-05-15
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公开(公告)号： US11469251B2公开(公告)日： 2022-10-11
- 发明人: Yanli Zhang , Johann Alsmeier
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Addison
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Addison
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L27/11597
- IPC分类号： H01L27/11597 ; H01L27/1159 ; H01L27/11592 ; H01L27/11587
摘要：
A memory device includes a semiconductor channel, a gate electrode, and a stack located between the semiconductor channel and the gate electrode. The stack includes, from one side to another, a first ferroelectric material portion, a second ferroelectric material portion, and a gate dielectric portion that contacts the semiconductor channel.
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