- 专利标题： Gas phase production of radicals for dielectrics
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申请号： US16984618申请日： 2020-08-04
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公开(公告)号： US11469147B2公开(公告)日： 2022-10-11
- 发明人: Anthony Dip
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/02 ; C23C16/50 ; C23C16/30 ; C23C16/458 ; C23C16/455
摘要：
A method for depositing a dielectric material includes heating a substrate disposed in a dielectric deposition chamber; dispensing a dielectric precursor from a first showerhead towards a major outer surface of the substrate; dispensing a mixture containing oxygen and ammonia from a second showerhead towards the major outer surface of the substrate; and reacting the dielectric precursor with the mixture to deposit a layer of oxynitride dielectric material on the substrate.
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