发明授权
- 专利标题： Method for forming semiconductor device structure with gate and resulting structures
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申请号： US16719694申请日： 2019-12-18
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公开(公告)号： US11469145B2公开(公告)日： 2022-10-11
- 发明人: Chai-Wei Chang , Po-Chi Wu , Wen-Han Fang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/28 ; H01L29/66 ; H01L29/51 ; H01L21/3105 ; H01L21/311
摘要：
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.
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