- 专利标题： Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer
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申请号： US17124184申请日： 2020-12-16
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公开(公告)号： US11469137B2公开(公告)日： 2022-10-11
- 发明人: Shay Reboh , Pablo Acosta Alba , Emmanuel Augendre
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR1914563 20191217,FR1915019 20191219
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/763 ; H01L23/66 ; H01L27/12
摘要：
A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.
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