The present disclosure provides an operation method related to a post package repair (PPR) function in a dynamic random access memory (DRAM) device. The method for operating a post package repair (PPR) function of a memory device is disclosed. The method includes providing a memory bank, which includes a memory array and a sense amplifier adjacent to the memory array, wherein the memory array comprises at least one defective row and at least one associated row, and the at least one associated row is electrically connected to the sense amplifier by a plurality of bit lines. The method also includes arranging a redundant row adjacent to the memory array, wherein the redundant row is electrically connected to the sense amplifier by the plurality of bit lines. The method also includes activating the at least one associated row to transmit data in the at least one associated row to the sense amplifier, latching the data in the sense amplifier; activating the redundant row, and transmitting the data from the sense amplifier to the redundant row.