Integrated circuit structures having asymmetric source and drain structures, and methods of fabricating integrated circuit structures having asymmetric source and drain structures, are described. For example, an integrated circuit structure includes a fin, and a gate stack over the fin. A first epitaxial source or drain structure is in a first trench in the fin at a first side of the gate stack. A second epitaxial source or drain structure is in a second trench in the fin at a second side of the gate stack, the second epitaxial source or drain structure deeper into the fin than the first epitaxial source or drain structure.