- 专利标题： III-V lateral bipolar junction transistor on local facetted buried oxide layer
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申请号： US16661518申请日： 2019-10-23
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公开(公告)号： US11444185B2公开(公告)日： 2022-09-13
- 发明人: Pouya Hashemi , Mahmoud Khojasteh , Tak H. Ning , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 L. Jeffrey Kelly
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L29/06 ; H01L29/66 ; H01L21/306 ; H01L29/205 ; H01L21/762
摘要：
A bipolar junction transistor (LBJT) device that includes a base region of a first III-V semiconductor material having A first band gap; and emitter and collector regions present on opposing sides of the base region, wherein the emitter and collector regions are comprised of a second III-V semiconductor material having a wider band gap than the first III-V semiconductor material. A dielectric region is present underlying the base region, emitter region and the collect region. The dielectric region has an inverted apex geometry. The sidewalls of dielectric region that extend to the apex of the inverted apex geometry are present on facets of a supporting substrate III-V semiconductor material having a {110} crystalline orientation.
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