发明授权
- 专利标题： Substrate processing apparatus, substrate processing method, and storage medium
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申请号： US16502310申请日： 2019-07-03
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公开(公告)号： US11430704B2公开(公告)日： 2022-08-30
- 发明人: Kanzo Kato
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer; Tanya E. Harkins
- 优先权： JP2015-136218 20150707
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/66 ; H01L21/67 ; H01L21/02 ; H01L21/027 ; G03F7/38
摘要：
A substrate processing apparatus, including: a development part configured to develop a substrate on which an exposed resist film formed to form a pattern on a surface of the substrate; a heat plate configured to mount and heat the substrate on which the resist film formed on the heat plate before the development is performed; a distribution acquisition part configured to optically acquire a size distribution of a dimension of the pattern on the surface of the substrate; and a determination part configured to determine whether abnormality has occurred in a mounting state of the substrate on the heat plate, based on the size distribution of the dimension of the pattern.
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