- 专利标题： Semiconductor light receiver
-
申请号： US17263853申请日： 2019-08-02
-
公开(公告)号： US11417783B2公开(公告)日： 2022-08-16
- 发明人: Tatsuro Hiraki , Shinji Matsuo
- 申请人： Nippon Telegraph and Telephone Corporation
- 申请人地址： JP Tokyo
- 专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Slater Matsil, LLP
- 优先权： JPJP2018-158941 20180828
- 国际申请： PCT/JP2019/030476 WO 20190802
- 国际公布： WO2020/044952 WO 20200305
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/105 ; H01L31/18
摘要：
A semiconductor layer formed on a clad layer and a light absorbing layer formed on the semiconductor layer are provided. The semiconductor layer includes a p-type region and an n-type region. The p-type region, which is of p-type, is provided on a side of one side portion of the light absorbing layer in a direction perpendicular to a direction in which light is guided, and the n-type region, which is of n-type, is provided on a side of another side portion of the light absorbing layer in the direction perpendicular to the direction in which light is guided. A p-type contact layer, which is of p-type, is formed on the p-type region, and an n-type contact layer is formed on the n-type region.
公开/授权文献
- US20210226073A1 Semiconductor Light Receiver 公开/授权日：2021-07-22
信息查询
IPC分类:
