- 专利标题: Three-dimensional stacking structure and manufacturing method thereof
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申请号: US16787031申请日: 2020-02-11
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公开(公告)号: US11417629B2公开(公告)日: 2022-08-16
- 发明人: Ming-Fa Chen , Sung-Feng Yeh , Tzuan-Horng Liu , Chao-Wen Shih
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: JCIPRNET
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L21/78 ; H01L21/56 ; H01L25/00
摘要:
A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.
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