发明授权
- 专利标题： Etching method
-
申请号： US16930483申请日： 2020-07-16
-
公开(公告)号： US11417530B2公开(公告)日： 2022-08-16
- 发明人: Takahiro Yokoyama , Maju Tomura , Yoshihide Kihara , Ryutaro Suda , Takatoshi Orui
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： JPJP2019-203326 20191108
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/02 ; H01J37/32
摘要：
An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
公开/授权文献
- US11456180B2 Etching method 公开/授权日：2022-09-27
信息查询
IPC分类:
