发明授权
- 专利标题: Memory device
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申请号: US16991178申请日: 2020-08-12
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公开(公告)号: US11417370B2公开(公告)日: 2022-08-16
- 发明人: Chien-Chen Lin , Wei Min Chan
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Merchant & Gould P.C.
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C5/14 ; G11C8/08 ; G11C7/12 ; G11C7/22
摘要:
A method of operating a memory device is provide. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compare with a clock cycle period to determine that the power nap period is less that the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.
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