- 专利标题: Defense mechanism for non-volatile memory based main memory
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申请号: US16723855申请日: 2019-12-20
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公开(公告)号: US11416323B2公开(公告)日: 2022-08-16
- 发明人: Seyedmohammad SeyedzadehDelcheh , Steven Raasch
- 申请人: Advanced Micro Devices, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Liang & Cheng, PC
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G06F11/07 ; G06F11/10 ; G11C11/409 ; G06F13/16 ; G06F9/30
摘要:
A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.
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