- 专利标题： Semiconductor device with aluminum nitride anti-deflection layer
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申请号： US16998235申请日： 2020-08-20
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公开(公告)号： US11410937B2公开(公告)日： 2022-08-09
- 发明人: Andrew P. Clarke , Michael J. Rondon , George Grama
- 申请人： Raytheon Company
- 申请人地址： US MA Waltham
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： US MA Waltham
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L25/18 ; H01L23/00
摘要：
A semiconductor device includes a substrate with both a compressive layer and an aluminum nitride tensile layer overlying at least a portion of the substrate. The aluminum nitride tensile layer is configured to counteract the compressive layer stress in the device to thereby control an amount of substrate bow in the device. The device includes a temperature-sensitive material supported by the substrate, in which the temperature-sensitive material has a relatively low thermal degradation temperature. The aluminum nitride tensile layer is formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.
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