Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US16925332Application Date: 2020-07-09
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Publication No.: US11387168B2Publication Date: 2022-07-12
- Inventor: Cheng-Lung Yang , Chih-Hung Su , Chen-Shien Chen , Hon-Lin Huang , Kun-Ming Tsai , Wei-Je Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/528 ; H01L21/48
Abstract:
A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
Public/Granted literature
- US20200343162A1 SEMICONDUCTOR DEVICES Public/Granted day:2020-10-29
Information query
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