- 专利标题： Method of manufacturing semiconductor device
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申请号： US16807448申请日： 2020-03-03
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公开(公告)号： US11387139B2公开(公告)日： 2022-07-12
- 发明人: Syuji Nozawa , Tatsuya Yamaguchi , Sunghil Lee
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer; Tanya E. Harkins
- 优先权： JPJP2019-043841 20190311
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/764 ; H01L21/02 ; H01L21/3105
摘要：
A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.
公开/授权文献
- US20200294844A1 Method of Manufacturing Semiconductor Device 公开/授权日：2020-09-17
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