- 专利标题： Plasma processing apparatus and plasma processing method
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申请号： US16642636申请日： 2019-06-20
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公开(公告)号： US11387110B2公开(公告)日： 2022-07-12
- 发明人: Yasushi Sonoda
- 申请人： HITACHI HIGH-TECH CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： HITACHI HIGH-TECH CORPORATION
- 当前专利权人： HITACHI HIGH-TECH CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge, P.C.
- 国际申请： PCT/JP2019/024437 WO 20190620
- 国际公布： WO2020/012907 WO 20200116
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01J37/32 ; H01L21/3065 ; H01L21/67
摘要：
A plasma processing apparatus, including a processing; a first radio frequency power source; a sample stage on which the sample is placed; a second radio frequency power; and a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, and a supply time of the first gas such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step.
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