Invention Grant
- Patent Title: Voltage reference circuit
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Application No.: US17219225Application Date: 2021-03-31
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Publication No.: US11353903B1Publication Date: 2022-06-07
- Inventor: Abdulkerim L Coban
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Huffman Law Group, PC
- Agent Gary Stanford
- Main IPC: G05F1/567
- IPC: G05F1/567 ; G05F3/26 ; G05F1/445 ; G05F1/46

Abstract:
A voltage reference circuit that can operate in a large supply voltage range with high PSRR, that dissipates low-power for a given output noise, and that has a low temperature-coefficient (TC) across a wide-temperature range. The voltage reference circuit does not require any calibration for low TC and high PSRR, occupies a relatively small circuit area, may be used without additional supply filtering in noisy or high-ripple supply environments, and is more robust against device mismatch effects particularly compared to designs based on sub-threshold operations. The voltage reference circuit is a special form of constant transconductance circuit that uses current mirror ratios that are chosen to achieve high PSSR and low noise properties. The device saturation voltage may be chosen so that flat temperature characteristics may be achieved.
Information query
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