发明授权
- 专利标题: High resolution radiation sensor based on single polysilicon floating gate array
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申请号: US16861652申请日: 2020-04-29
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公开(公告)号: US11353597B2公开(公告)日: 2022-06-07
- 发明人: Yakov Roizin , Evgeny Pikhay , Vladislav Dayan
- 申请人: Tower Semiconductor Ltd.
- 申请人地址: IL Migdal Haemek
- 专利权人: Tower Semiconductor Ltd.
- 当前专利权人: Tower Semiconductor Ltd.
- 当前专利权人地址: IL Migdal Haemek
- 代理机构: Bever, Hoffman & Harms, LLP
- 主分类号: G01T1/02
- IPC分类号: G01T1/02 ; H01L27/146 ; H01L31/119 ; H01L31/0216
摘要:
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.
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