发明授权
- 专利标题: Flow-rate sensor
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申请号: US17256908申请日: 2019-06-20
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公开(公告)号: US11353349B2公开(公告)日: 2022-06-07
- 发明人: Hiroki Nakatsuchi , Yasuo Onose , Takayuki Yogo , Ryotaro Shimada
- 申请人: Hitachi Automotive Systems, Ltd.
- 申请人地址: JP Hitachinaka
- 专利权人: Hitachi Automotive Systems, Ltd.
- 当前专利权人: Hitachi Automotive Systems, Ltd.
- 当前专利权人地址: JP Hitachinaka
- 代理机构: Crowell & Moring LLP
- 优先权: JPJP2018-132464 20180712
- 国际申请: PCT/JP2019/024467 WO 20190620
- 国际公布: WO2020/012908 WO 20200116
- 主分类号: G01F1/692
- IPC分类号: G01F1/692 ; G01F1/38 ; G01F1/684
摘要:
A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.
公开/授权文献
- US20210278263A1 Flow-Rate Sensor 公开/授权日:2021-09-09
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