- 专利标题: Method and device for locating the origin of a defect affecting a stack of thin layers deposited on a substrate
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申请号: US16309184申请日: 2017-06-22
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公开(公告)号: US11352691B2公开(公告)日: 2022-06-07
- 发明人: Bernard Nghiem , Yohan Faucillon , Gregoire Mathey , Thierry Kauffmann
- 申请人: SAINT-GOBAIN GLASS FRANCE
- 申请人地址: FR Courbevoie
- 专利权人: SAINT-GOBAIN GLASS FRANCE
- 当前专利权人: SAINT-GOBAIN GLASS FRANCE
- 当前专利权人地址: FR Courbevoie
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: FR1655951 20160627
- 国际申请: PCT/FR2017/051666 WO 20170622
- 国际公布: WO2018/002482 WO 20180104
- 主分类号: C23C14/18
- IPC分类号: C23C14/18 ; C23C14/54 ; G01N21/88 ; G02B1/10 ; G06T7/00 ; G01N21/84 ; G01N21/896 ; G02B5/28 ; C23C14/35
摘要:
A method for locating, in a deposition line including a succession of compartments, an origin of a defect affecting a stack of thin layers deposited on a substrate in the compartments, in which each thin layer is deposited in one or more successive compartments of the deposition line and pieces of debris remaining on the surface of a thin layer deposited in a compartment act as masks for the subsequent depositions of thin layers and are the origin of defects, includes obtaining at least one image showing the defect, determining, from the at least one image, a signature of the defect, the signature containing at least one characteristic representative of the defect, and identifying at least one compartment of the deposition line liable to be the origin of the defect from the signature of the defect and using reference signatures associated with the compartments of the deposition line.
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