- 专利标题: Thermal chamber exhaust structure and method
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申请号: US16519504申请日: 2019-07-23
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公开(公告)号: US11348811B2公开(公告)日: 2022-05-31
- 发明人: Hsien-Chang Hsieh , Chun-Chih Lin , Tah-Te Shih , Wen-Hsong Wu , Chune-Te Yang , Yu-Jen Su
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: F01N13/08
- IPC分类号: F01N13/08 ; H01L21/67 ; F27D17/00 ; F23J13/02
摘要:
An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.
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