Invention Grant
- Patent Title: Plasma-enhanced anneal chamber for wafer outgassing
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Application No.: US17014736Application Date: 2020-09-08
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Publication No.: US11348769B2Publication Date: 2022-05-31
- Inventor: Lara Hawrylchak , Matthew D. Scotney-Castle , Norman L. Tam , Matthew Spuller , Kong Lung Samuel Chan , Dongming Iu , Stephen Moffatt
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
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