- 专利标题： Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
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申请号： US16642866申请日： 2017-09-29
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公开(公告)号： US11335801B2公开(公告)日： 2022-05-17
- 发明人: Marko Radosavljevic , Han Wui Then , Sansaptak Dasgupta
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Essential Patents Group, LLP
- 国际申请： PCT/US2017/054631 WO 20170929
- 国际公布： WO2019/066973 WO 20190404
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/08 ; H01L29/20 ; H01L29/205 ; H01L29/66
摘要：
A device including a III-N material is described. In an example, a device includes a first layer including a first group III-nitride (III-N) material and a polarization charge inducing layer, including a second III-N material, above the first layer. The device further includes a gate electrode above the polarization charge inducing layer and a source structure and a drain structure on opposite sides of the gate electrode. The source structure and the drain structure both include a first portion adjacent to the first layer and a second portion above the first portion, the first portion includes a third III-N material with an impurity dopant, and the second portion includes a fourth III-N material, where the fourth III-N material includes the impurity dopant and further includes indium, where the indium content increases with distance from the first portion.
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