- 专利标题： Post-CMP cleaning and apparatus
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申请号： US16390691申请日： 2019-04-22
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公开(公告)号： US11322345B2公开(公告)日： 2022-05-03
- 发明人: Fu-Ming Huang , Liang-Guang Chen , Ting-Kui Chang , Chun-Chieh Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/67 ; H01L21/687 ; H01L21/306 ; B08B1/00 ; B08B1/04 ; B08B3/04
摘要：
A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.
公开/授权文献
- US20190244804A1 Post-CMP Cleaning and Apparatus 公开/授权日：2019-08-08
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