- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US16746595申请日： 2020-01-17
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公开(公告)号： US11309419B2公开(公告)日： 2022-04-19
- 发明人: Chao-Wei Hsu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L27/092
摘要：
A semiconductor device includes a semiconductor fin and a gate structure above the semiconductor fin. The semiconductor fin includes a bottom portion and a top portion above the bottom portion. The bottom portion and the top portion are made of different materials. The top portion includes a head part and a neck part between the head part and the bottom portion. The neck part has a width less than a width of the head part, and the neck part is in contact with the bottom portion.
公开/授权文献
- US20210226051A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2021-07-22
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