- 专利标题： Field effect transistor
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申请号： US16874033申请日： 2020-05-14
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公开(公告)号： US11289600B2公开(公告)日： 2022-03-29
- 发明人: Byounggun Choi
- 申请人： Electronics and Telecommunications Research Institute
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Kile Park Reed & Houtteman PLLC
- 优先权： KR10-2019-0058000 20190517
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/78 ; H01L29/20
摘要：
Provided is a field effect transistor including a semiconductor layer, a gate electrode provided on a channel region in the semiconductor layer, and a channel adjusting member provided adjacent to the channel region on one surface of the semiconductor layer and overlapping the gate electrode on a plane. Here, the channel adjusting member provides a depletion layer in the channel region.
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