- 专利标题: Voltage reference with temperature compensation
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申请号: US16949836申请日: 2020-11-17
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公开(公告)号: US11287840B2公开(公告)日: 2022-03-29
- 发明人: Zoltan Randlisek
- 申请人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Dickinson Wright PLLC
- 代理商 Mark E. Scott
- 主分类号: G05F3/26
- IPC分类号: G05F3/26
摘要:
Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.
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