- 专利标题： Etching method and etching device
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申请号： US16316128申请日： 2017-05-31
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公开(公告)号： US11282714B2公开(公告)日： 2022-03-22
- 发明人: Akifumi Yao , Kunihiro Yamauchi , Tatsuo Miyazaki , Jun Lin , Susumu Yamauchi , Kazuaki Nishimura
- 申请人： CENTRAL GLASS COMPANY, LIMITED , TOKYO ELECTRON LIMITED
- 申请人地址： JP Yamaguchi; JP Tokyo
- 专利权人： CENTRAL GLASS COMPANY, LIMITED,TOKYO ELECTRON LIMITED
- 当前专利权人： CENTRAL GLASS COMPANY, LIMITED,TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Yamaguchi; JP Tokyo
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JPJP2016-146303 20160726
- 国际申请： PCT/JP2017/020237 WO 20170531
- 国际公布： WO2018/020822 WO 20180201
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; H01L21/3213 ; H01L21/67
摘要：
The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.
公开/授权文献
- US20210287915A1 ETCHING METHOD AND ETCHING DEVICE 公开/授权日：2021-09-16
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