Invention Grant
- Patent Title: Thin film transistor comprising light shielding layer and light blocking portion and method for manufacturing the same, display panel and display device
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Application No.: US15999687Application Date: 2017-12-14
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Publication No.: US11251309B2Publication Date: 2022-02-15
- Inventor: Jiangbo Chen , Young Suk Song , Wei Li , Liangchen Yan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Armstrong Teasdale LLP
- Priority: CN201710334764.8 20170512
- International Application: PCT/CN2017/116200 WO 20171214
- International Announcement: WO2018/205606 WO 20181115
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/32 ; H01L29/417 ; H01L29/423

Abstract:
Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.
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Information query
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