- 专利标题: Solid-state imaging element
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申请号: US16479758申请日: 2018-07-18
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公开(公告)号: US11245861B2公开(公告)日: 2022-02-08
- 发明人: Atsumi Niwa
- 申请人: Sony Semiconductor Solutions Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 优先权: JPJP2017-209046 20171030
- 国际申请: PCT/JP2018/026802 WO 20180718
- 国际公布: WO2019/087472 WO 20190509
- 主分类号: H04N5/351
- IPC分类号: H04N5/351 ; H04N5/369 ; H04N5/3745
摘要:
Stability of a current-voltage conversion circuit is increased in a solid-state imaging element that converts photocurrent to a voltage signal.
A photodiode photoelectrically converts incident light and generates photocurrent. A conversion transistor converts photocurrent to a voltage signal and outputs the voltage signal from a gate. A current source transistor supplies predetermined constant current to an output signal line connected to the gate. A voltage supply transistor supplies a certain voltage corresponding to the predetermined constant current from the output signal line to a source of the conversion transistor. A capacitance is connected between the gate and the source of the conversion transistor.
A photodiode photoelectrically converts incident light and generates photocurrent. A conversion transistor converts photocurrent to a voltage signal and outputs the voltage signal from a gate. A current source transistor supplies predetermined constant current to an output signal line connected to the gate. A voltage supply transistor supplies a certain voltage corresponding to the predetermined constant current from the output signal line to a source of the conversion transistor. A capacitance is connected between the gate and the source of the conversion transistor.
公开/授权文献
- US20210258519A1 SOLID-STATE IMAGING ELEMENT 公开/授权日:2021-08-19
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