- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US15962181申请日： 2018-04-25
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公开(公告)号： US11245034B2公开(公告)日： 2022-02-08
- 发明人: Kuei-Ming Chang , Ta-Chun Lin , Rei-Jay Hsieh , Yung-Chih Wang , Wen-Huei Guo , Kuo-Hua Pan , Buo-Chin Hsu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L21/762 ; H01L29/417
摘要：
A semiconductor device includes a substrate, first and second source/drain features, and a dielectric plug. The substrate has a semiconductor fin. The first and second source/drain features are over first and second portions of the semiconductor fin, respectively. The dielectric plug is at least partially embedded in a third portion of the semiconductor fin. The third portion is in between the first and second portions of the semiconductor fin. The dielectric plug includes a first dielectric material and a second dielectric material different from the first dielectric material.
公开/授权文献
- US20190334035A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2019-10-31
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